S.M.A.R.T. Laboratory
Plasma Lab ICP-RIE
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The Oxford Plasma Lab inductively-coupled plasma (ICP) reactive ion etching (RIE) system is used to etch detailed cavities into semiconductor substrates. The system can etch holes into GaAs and Si from a few microns up to hundreds of microns deep.

Oxford Plasma Lab 100 ICP Reactive Ion Etch System
Oxford Plasma Lab 100 ICP Reactive Ion Etch System

Argon plasma glow from the Oxford ICP-RIE.
Argon plasma glow from the Oxford ICP-RIE.

The  higher density of the inductively coupled plasma in the Oxford RIE allows for higher etch rates.
The higher density of the inductively coupled plasma in the Oxford RIE allows for higher etch rates.



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